1. RODNA
  2. FCEN
  3. FCEN - Facultad de Ciencias Exactas y Naturales. UBA
Registro completo de metadatos
Campo DC Valor Lengua/Idioma
dc.provenanceFacultad de Ciencias Exactas y Naturales de la UBA-
dc.contributorGhenzi, N.-
dc.contributor<div class="autor_fcen" id="7763">Sánchez, M.J.</div>-
dc.contributorGomez-Marlasca, F.-
dc.contributor<div class="autor_fcen" id="4968">Levy, P.</div>-
dc.contributor<div class="autor_fcen" id="7556">Rozenberg, M.J.</div>-
dc.creatorGhenzi, N.-
dc.creator<div class="autor_fcen" id="7763">Sánchez, M.J.</div>-
dc.creatorGomez-Marlasca, F.-
dc.creator<div class="autor_fcen" id="4968">Levy, P.</div>-
dc.creator<div class="autor_fcen" id="7556">Rozenberg, M.J.</div>-
dc.date.accessioned2018-05-04T22:03:07Z-
dc.date.accessioned2018-05-28T15:47:40Z-
dc.date.available2018-05-04T22:03:07Z-
dc.date.available2018-05-28T15:47:40Z-
dc.date.issued2010-
dc.identifier.urihttp://10.0.0.11:8080/jspui/handle/bnmm/68337-
dc.descriptionMultilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.-
dc.descriptionFil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.-
dc.descriptionFil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.-
dc.descriptionFil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.-
dc.formatapplication/pdf-
dc.languageeng-
dc.rightsinfo:eu-repo/semantics/openAccess-
dc.rightshttp://creativecommons.org/licenses/by/2.5/ar-
dc.sourceJ Appl Phys 2010;107(9)-
dc.source.urihttp://digital.bl.fcen.uba.ar/Download/paper/paper_00218979_v107_n9_p_Ghenzi.pdf-
dc.subjectApplied electric field-
dc.subjectHysteresis switching-
dc.subjectInitial state-
dc.subjectMicroscopic mechanisms-
dc.subjectRealistic model-
dc.subjectResistance state-
dc.subjectResistive switching-
dc.subjectSwitching thresholds-
dc.subjectTransition-metal oxides-
dc.subjectComputer simulation-
dc.subjectElectric fields-
dc.subjectHysteresis-
dc.subjectManganese oxide-
dc.subjectOxygen-
dc.subjectOxygen vacancies-
dc.subjectTransition metal compounds-
dc.subjectTransition metals-
dc.subjectVacancies-
dc.subjectSwitching-
dc.titleHysteresis switching loops in Ag-manganite memristive interfaces-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:ar-repo/semantics/artículo-
dc.typeinfo:eu-repo/semantics/publishedVersion-
Aparece en las colecciones: FCEN - Facultad de Ciencias Exactas y Naturales. UBA

Ficheros en este ítem:
No hay ficheros asociados a este ítem.
Mostrar el registro sencillo del ítem